CTLDM303N-M832DS mosfet equivalent, surface mount dual n-channel enhancement-mode silicon mosfet.
* Low rDS(ON) (0.078Ω MAX @ VGS=2.5V)
* High current (ID=3.6A)
* Low gate charge
MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continu.
This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.
TLM832DS CAS.
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